ABB

ABB 5SHX2645L0006 3BHB012961R0002 IGCT Module

In stock, ready to ship

  • Manufacturer: ABB

  • Product No.: 5SHX2645L0006 3BHB012961R0002

  • Product Type: IGCT Module

  • Product Origin: Sweden

  • Payment: T/T

  • Weight: 2900g

  • Shipping port: Xiamen

  • Warranty: 12 months

The ABB 5SHX 2645L0006 is a Reverse Conducting Integrated Gate-Commutated Thyristor (IGCT) module designed for high-power switching applications. Optimized for medium-frequency operations, it is widely used in industrial and renewable energy systems, including:

Technical Specifications

Parameter Value
Part Number 5SHX2645L0006 / 3BHB012961R0002
Nominal Current (ITGQM) 2200 A
Maximum Blocking Voltage (VDRM) 4500 V
Max. Peak Non-Repetitive Surge Current (ITSM) 17 kA
Threshold Voltage (VT0) 1.8 V
On-State Voltage (VT) 2.3 – 2.95 V @ IT = 2200 A, Tj = 125°C
Slope Resistance (rT) 0.533 
Permanent DC Voltage (VDC) 2800 V
Repetitive Peak Off-State Current (IDRM)  50 mA (VD = VDRM, Gate unit energized)
Mounting Force (FM) 42 – 46 kN
Pole-Piece Diameter (Dp) 85 mm ± 0.1 mm
Housing Thickness (H) 25.7 – 26.2 mm (clamped Fm = 44 kN)
Surface Creepage Distance (DS) 33 mm (Anode to Gate)
Air Strike Distance (Da) 10 mm (Anode to Gate)
Length (l) 439 mm ± 1 mm
Height (h) 41 mm ± 1 mm
Width (w) 173 mm ± 1 mm
Average On-State Current (IT(AV)M) 1010 A (Half sine wave, Tc = 85°C)
RMS On-State Current (IT(RMS)) 1590 A
Peak Non-Repetitive Surge Current (ITSM) 25 kA (tp = 3 ms, Tj = 125°C, sine half wave)
17 kA (tp = 10 ms, Tj = 125°C, sine half wave)
13 kA (tp = 30 ms, Tj = 125°C, sine half wave)

 

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